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Infineon CoolMOS P7 Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R3K3P7ATMA1

RS 제품 번호:: 214-9051
제조사 부품 번호:: IPD80R3K3P7ATMA1
제조업체:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R3K3P7ATMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 25 units)*

₩15,510.00

재고있음

5,000 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
25 - 600	₩620.40	₩15,510.00
625 - 1225	₩605.36	₩15,115.20
1250 +	₩594.08	₩14,870.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 214-9051
제조사 부품 번호:: IPD80R3K3P7ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.9A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-252
	Series	CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.3Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	18W
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	5.8nC
	Maximum Operating Temperature	150°C
	Height	2.41mm
	Width	6.22 mm
	Length	6.73mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.9A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-252
	Series CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.3Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 18W
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 5.8nC
	Maximum Operating Temperature 150°C
	Height 2.41mm
	Width 6.22 mm
	Length 6.73mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD80R3K3P7ATMA1

The Infineon latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation. These are easy to drive and to parallel, enabling higher power density designs, BOM savings and lower assembly costs. These are recommended for hard and soft switching fly back topologies for LED Lighting, low power Chargers and Adapters, Audio, AUX power and Industrial power.

It comes with Fully optimized portfolio

Integrated Zener Diode ESD protection

Infineon CoolMOS P7 Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R3K3P7ATMA1

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