Infineon OptiMOS N-Channel MOSFET, 19 A, 55 V Enhancement, 3-Pin TO-252 IPD15N06S2L64ATMA2

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RS 제품 번호:
214-9032
제조사 부품 번호:
IPD15N06S2L64ATMA2
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

64mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

47W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

11nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

6.22mm

Length

6.5mm

Standards/Approvals

No

Height

2.3mm

Automotive Standard

AEC-Q101

Infineon OptiMOS Series MOSFET, 55V Drain Source Voltage, 19A Continuous Drain Current - IPD15N06S2L64ATMA2


This MOSFET is a power switching transistor designed for high-demand automotive and industrial environments, providing controlled conduction of current in N-channel enhancement mode across a wide temperature range. It is suitable for surface‑mounted PCB designs where efficient switching and durability under elevated temperatures are required.

Features and Benefits:


• 55 V maximum drain‑source voltage for demanding voltage margins
• 19 A continuous drain current for high‑current switching performance
• 64 mΩ maximum Rds(on) for reduced conduction losses
• 47 W maximum power dissipation for robust thermal handling
• 11 nC typical gate charge for fast switching transitions
• 20 V maximum gate‑source rating for flexible gate‑drive levels

Applications


• Suitable for automotive power distribution modules
• Ideal for DC-DC converter switch stages
• Used with motor‑drive circuits in vehicles
• Can be used for high‑speed load switching in control units
• Appropriate for surface‑mount power management on Compact boards

What temperature range can it operate within?


It functions across −55 °C to 175 °C, accommodating low‑temperature starts and high‑temperature engine‑bay conditions.

How does the package support PCB assembly?


The component is supplied in a TO‑252 surface‑mount package sized 6.5 x 6.22 mm which suits automated soldering processes.

What is the channel configuration and mode of operation?


It uses an N‑type channel and operates in enhancement mode requiring a positive gate‑source voltage to conduct.

What forward conduction characteristic should designers expect?


Expect a forward voltage of 1.3 V during conduction which factors into voltage‑drop and thermal calculations.

Are there limits on gate‑drive magnitude?


The gate‑source voltage must not exceed 20 V to prevent gate‑region overstress.

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