Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263

RS 제품 번호:: 214-4369
제조사 부품 번호:: IPB60R280P7ATMA1
제조업체:: Infineon

Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 reel of 1000 units)*

₩1,536,000.00

일시적 품절

2026년 10월 22일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
1000 - 4000	₩1,536.00	₩1,535,400.00
5000 +	₩1,504.00	₩1,504,800.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 214-4369
제조사 부품 번호:: IPB60R280P7ATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	600V CoolMOS P7
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	280mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	53W
	Typical Gate Charge Qg @ Vgs	18nC
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	4.5mm
	Length	10.02mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series 600V CoolMOS P7
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 280mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 53W
	Typical Gate Charge Qg @ Vgs 18nC
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 4.5mm
	Length 10.02mm
	Automotive Standard No

Datasheet - IPB60R280P7ATMA1

Infineon 600V CoolMOS P7 Series MOSFET, 600V Drain Source Voltage, 12A Continuous Drain Current - IPB60R280P7ATMA1

This MOSFET is a high-voltage N-channel enhancement device engineered for power switching in demanding electronic systems. It operates across a wide temperature range and is intended for surface-mounted applications where robust voltage handling and controlled gate drive are required. The component suits designs that require high-voltage blocking, moderate conduction current and compact mounting.

Features and Benefits:

• 600V drain-source rating for high-voltage switching capability
• 12A continuous drain current for sustained load handling
• 280 mΩ Rds(on) for efficient conduction at normal operating conditions
• 18 nC typical gate charge for predictable switching energy
• 53W maximum power dissipation for thermal margin in power stages
• 20V gate tolerance for compatibility with common gate drivers

Applications

• Suitable for offline power supplies and SMPS primary switches
• Ideal for high-voltage DC-DC converters and power modules
• Used with rectifier and snubber networks in power conditioning
• Can be used for industrial motor-drive front-ends
• Used for telecoms power systems requiring space-efficient mounting

What package and mounting approach does it require?

It is supplied in a TO-263 package designed for surface-mount assembly to provide low-profile board integration and efficient board-level thermal conduction.

What thermal limits govern its use in high-temperature environments?

The device is rated to operate between -55 °C and 150 °C, defining allowable ambient and junction conditions for reliable operation within that span.

How does the gate specification influence external driver selection?

With a maximum gate-source voltage of 20V, drivers should keep peak Vgs within this boundary and account for the 18 nC typical gate charge when sizing drive current for the desired switching speed.

What conduction behaviour should designers anticipate under continuous load?

Expect continuous drain currents up to 12 A, with conduction losses influenced by the specified 280 mΩ on-resistance and overall board thermal design.