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Infineon CoolMOS Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-263

RS 제품 번호:: 217-2503
제조사 부품 번호:: IPB60R080P7ATMA1
제조업체:: Infineon

Infineon CoolMOS Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-263

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대량 구매 할인 기용 가능

Subtotal (1 reel of 1000 units)*

₩3,325,720.00

일시적 품절

2026년 5월 04일 부터 배송

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수량	한팩당	릴당*
1000 - 1000	₩3,325.72	₩3,326,096.00
2000 - 3000	₩3,259.92	₩3,259,732.00
4000 +	₩3,194.12	₩3,194,496.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 217-2503
제조사 부품 번호:: IPB60R080P7ATMA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	37A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-263
	Series	CoolMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	51nC
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	129W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	4.57mm
	Length	10.31mm
	Width	9.45 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 37A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-263
	Series CoolMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 51nC
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 129W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 4.57mm
	Length 10.31mm
	Width 9.45 mm
	Automotive Standard No

Datasheet - IPB60R080P7ATMA1

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ G

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Infineon CoolMOS Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-263

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