onsemi SUPERFET III N-Channel MOSFET & Diode, 13 A, 800 V Enhancement, 3-Pin TO-220 NTPF360N80S3Z
- RS 제품 번호:
- 205-2506
- 제조사 부품 번호:
- NTPF360N80S3Z
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 5 units)*
₩36,540.00
일시적 품절
- 2026년 10월 05일 부터 905 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 245 | ₩7,308.00 | ₩36,540.00 |
| 250 - 495 | ₩7,132.00 | ₩35,660.00 |
| 500 + | ₩7,020.00 | ₩35,100.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 205-2506
- 제조사 부품 번호:
- NTPF360N80S3Z
- 제조업체:
- onsemi
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | SUPERFET III | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 31W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 25.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.5mm | |
| Standards/Approvals | RoHS | |
| Length | 28.45mm | |
| Width | 9.96mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series SUPERFET III | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 31W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 25.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.5mm | ||
Standards/Approvals RoHS | ||
Length 28.45mm | ||
Width 9.96mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III series N-channel 800V MOSFET is optimized for primary switch of fly back converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal zener diode significantly improves ESD capability. This new family enables make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies.
Continuous Drain Current rating is 13A
Drain to source on resistance rating is 360mohm
Ultra low gate charge
Low stored energy in output capacitance
100% avalanche tested
Package type is TO-220F
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