onsemi SUPERFET III Type N-Channel MOSFET & Diode, 13 A, 800 V Enhancement, 3-Pin TO-220 NTP360N80S3Z

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

모든 MOSFETs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩29,553.60

Add to Basket
수량 선택 또는 입력
마지막 RS 재고
  • 최종적인 720 개 unit(s)이 배송 준비 됨
수량
한팩당
한팩당*
5 - 195₩5,910.72₩29,553.60
200 - 395₩5,760.32₩28,801.60
400 +₩5,673.84₩28,369.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
205-2504
제조사 부품 번호:
NTP360N80S3Z
제조업체:
onsemi
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

onsemi

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-220

Series

SUPERFET III

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

96W

Typical Gate Charge Qg @ Vgs

25.3nC

Maximum Operating Temperature

150°C

Width

9.65 mm

Height

4.7mm

Length

30.7mm

Standards/Approvals

No

Automotive Standard

No

The ON Semiconductor SUPERFET III series N-channel 800V MOSFET is optimized for primary switch of fly back converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal zener diode significantly improves ESD capability. This new family enables make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies.

Continuous Drain Current rating is 13A

Drain to source on resistance rating is 360mohm

Ultra low gate charge

Low stored energy in output capacitance

100% avalanche tested

Package type is TO-220

관련된 링크들