onsemi NTB N-Channel MOSFET, 201 A, 100 V Enhancement, 3-Pin TO-263 NTB004N10G
- RS 제품 번호:
- 202-5687
- 제조사 부품 번호:
- NTB004N10G
- 제조업체:
- onsemi
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 reel of 800 units)*
₩6,251,200.00
일시적 품절
- 2026년 10월 05일 부터 1,600 개 단위 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 800 - 800 | ₩7,814.00 | ₩6,251,680.00 |
| 1600 - 2400 | ₩7,658.00 | ₩6,126,560.00 |
| 3200 + | ₩7,504.00 | ₩6,004,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 202-5687
- 제조사 부품 번호:
- NTB004N10G
- 제조업체:
- onsemi
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 201A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | NTB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.82mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 175nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 340W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.63mm | |
| Width | 4.83mm | |
| Standards/Approvals | Pb-Free and are RoHS | |
| Height | 15.88mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 201A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series NTB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.82mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 175nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 340W | ||
Maximum Operating Temperature 175°C | ||
Length 10.63mm | ||
Width 4.83mm | ||
Standards/Approvals Pb-Free and are RoHS | ||
Height 15.88mm | ||
Automotive Standard No | ||
The ON Semiconductor Power MOSFET runs with 201 Ampere and 100 Volts. It can be used in Hot Swap in 48 V systems.
Low drain to source on resistance
High current capability
Wide safe operating area
Pb free
Halogen free
RoHS compliant
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