STMicroelectronics SCT Type N-Channel MOSFET, 65 A, 1200 V Depletion, 3-Pin Hip-247
- RS 제품 번호:
- 202-5478
- 제조사 부품 번호:
- SCT50N120
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩2,027,961.00
일시적 품절
- 2027년 1월 13일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 120 | ₩67,598.70 | ₩2,027,961.00 |
| 150 + | ₩66,247.35 | ₩1,987,420.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 202-5478
- 제조사 부품 번호:
- SCT50N120
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.59Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3.5V | |
| Typical Gate Charge Qg @ Vgs | 122nC | |
| Maximum Power Dissipation Pd | 318W | |
| Maximum Operating Temperature | 200°C | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Height | 34.95mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.59Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3.5V | ||
Typical Gate Charge Qg @ Vgs 122nC | ||
Maximum Power Dissipation Pd 318W | ||
Maximum Operating Temperature 200°C | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Height 34.95mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Very fast and robust intrinsic body diode
Low capacitance
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