STMicroelectronics SCT Type N-Channel SiC Power Module, 12 A, 1200 V Depletion, 3-Pin Hip-247
- RS 제품 번호:
- 202-4776
- 제조사 부품 번호:
- SCT10N120AG
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩453,738.00
마지막 RS 재고
- 최종적인 19 개 unit(s)이 배송 준비 됨
Tube(s) | Per Tube | 한팩당* |
|---|---|---|
| 1 - 1 | ₩453,738.00 | ₩15,124.60 |
| 2 - 3 | ₩443,868.00 | ₩14,795.60 |
| 4 + | ₩430,557.60 | ₩14,351.92 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 202-4776
- 제조사 부품 번호:
- SCT10N120AG
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | SiC Power Module | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.52Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 4.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 200°C | |
| Length | 15.75mm | |
| Width | 5.15 mm | |
| Height | 34.95mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type SiC Power Module | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.52Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 4.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 200°C | ||
Length 15.75mm | ||
Width 5.15 mm | ||
Height 34.95mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Very fast and robust intrinsic body diode
Low capacitance
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