STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2 SCT20N120H
- RS 제품 번호:
- 201-4416
- 제조사 부품 번호:
- SCT20N120H
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩20,210.00
일시적 품절
- 2026년 9월 01일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 249 | ₩20,210.00 |
| 250 - 499 | ₩19,702.40 |
| 500 + | ₩19,401.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 201-4416
- 제조사 부품 번호:
- SCT20N120H
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-2 | |
| Series | SiC MOSFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 203mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 10.4mm | |
| Width | 4.7 mm | |
| Length | 15.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-2 | ||
Series SiC MOSFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 203mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 175°C | ||
Height 10.4mm | ||
Width 4.7 mm | ||
Length 15.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.
Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Low capacitance
관련된 링크들
- STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2
- ROHM SCT SiC N-Channel MOSFET, 56 A, 1200 V, 7-Pin D2PAK SCT3040KW7TL
- STMicroelectronics SCT025H120G3AG SiC N-Channel MOSFET, 55 A, 1200 V, 7-Pin H2PAK-7 SCT025H120G3AG
- STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 7-Pin H2PAK-7
- STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3AG
- STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT040H120G3AG
- STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7
- STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 750 V, 7-Pin HU3PAK SCT060HU75G3AG