onsemi NVMYS5D3N04C Type N-Channel MOSFET, 71 A, 40 V Enhancement, 4-Pin LFPAK NVMYS5D3N04CTWG
- RS 제품 번호:
- 195-2523
- 제조사 부품 번호:
- NVMYS5D3N04CTWG
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 30 units)*
₩37,844.40
마지막 RS 재고
- 최종적인 5,970 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 30 - 720 | ₩1,261.48 | ₩37,827.48 |
| 750 - 1470 | ₩1,229.52 | ₩36,885.60 |
| 1500 + | ₩1,210.72 | ₩36,321.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 195-2523
- 제조사 부품 번호:
- NVMYS5D3N04CTWG
- 제조업체:
- onsemi
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 71A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMYS5D3N04C | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.25 mm | |
| Height | 1.15mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 71A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMYS5D3N04C | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 175°C | ||
Width 4.25 mm | ||
Height 1.15mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
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