onsemi NVMYS1D3N04C Type N-Channel MOSFET, 252 A, 40 V Enhancement, 4-Pin LFPAK
- RS 제품 번호:
- 185-8162
- 제조사 부품 번호:
- NVMYS1D3N04CTWG
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩4,731,960.00
일시적 품절
- 2025년 12월 29일 부터 3,000 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩1,577.32 | ₩4,731,396.00 |
| 6000 - 9000 | ₩1,545.36 | ₩4,636,644.00 |
| 12000 + | ₩1,515.28 | ₩4,544,148.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 185-8162
- 제조사 부품 번호:
- NVMYS1D3N04CTWG
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 252A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMYS1D3N04C | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.15mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 134W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4.25 mm | |
| Height | 1.2mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 252A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMYS1D3N04C | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.15mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 134W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4.25 mm | ||
Height 1.2mm | ||
Automotive Standard AEC-Q101 | ||
비준수
- COO (Country of Origin):
- PH
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
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