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onsemi NVMYS1D3N04C Type N-Channel MOSFET, 252 A, 40 V Enhancement, 4-Pin LFPAK

RS 제품 번호:: 185-8162
제조사 부품 번호:: NVMYS1D3N04CTWG
제조업체:: onsemi

onsemi NVMYS1D3N04C Type N-Channel MOSFET, 252 A, 40 V Enhancement, 4-Pin LFPAK

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대량 구매 할인 기용 가능

Subtotal (1 reel of 3000 units)*

₩4,731,960.00

마지막 RS 재고

최종적인 3,000 개 unit(s)이 배송 준비 됨

수량	한팩당	릴당*
3000 - 3000	₩1,577.32	₩4,731,396.00
6000 - 9000	₩1,545.36	₩4,636,644.00
12000 +	₩1,515.28	₩4,544,148.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 185-8162
제조사 부품 번호:: NVMYS1D3N04CTWG
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	252A
	Maximum Drain Source Voltage Vds	40V
	Series	NVMYS1D3N04C
	Package Type	LFPAK
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	1.15mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	75nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	134W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	1.2mm
	Standards/Approvals	No
	Length	5mm
	Width	4.25 mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 252A
	Maximum Drain Source Voltage Vds 40V
	Series NVMYS1D3N04C
	Package Type LFPAK
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 1.15mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 75nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 134W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 1.2mm
	Standards/Approvals No
	Length 5mm
	Width 4.25 mm
	Automotive Standard AEC-Q101

Datasheet NVMYS1D3N04CTWG

COO (Country of Origin):: PH

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

onsemi NVMYS1D3N04C Type N-Channel MOSFET, 252 A, 40 V Enhancement, 4-Pin LFPAK

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