제조사부품번호

onsemi NVMYS5D3N04C Type N-Channel MOSFET, 71 A, 40 V Enhancement, 4-Pin LFPAK

RS 제품 번호:: 195-2522
제조사 부품 번호:: NVMYS5D3N04CTWG
제조업체:: onsemi

onsemi NVMYS5D3N04C Type N-Channel MOSFET, 71 A, 40 V Enhancement, 4-Pin LFPAK

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 reel of 3000 units)*

₩2,058,600.00

마지막 RS 재고

최종적인 3,000 개 unit(s)이 배송 준비 됨

수량	한팩당	릴당*
3000 - 3000	₩686.20	₩2,060,856.00
6000 - 9000	₩673.04	₩2,019,684.00
12000 +	₩659.88	₩1,979,076.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 195-2522
제조사 부품 번호:: NVMYS5D3N04CTWG
제조업체:: onsemi

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	71A
	Maximum Drain Source Voltage Vds	40V
	Series	NVMYS5D3N04C
	Package Type	LFPAK
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	5.3mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	50W
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	16nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	1.15mm
	Standards/Approvals	No
	Length	5mm
	Width	4.25 mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 71A
	Maximum Drain Source Voltage Vds 40V
	Series NVMYS5D3N04C
	Package Type LFPAK
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 5.3mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 50W
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 16nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 1.15mm
	Standards/Approvals No
	Length 5mm
	Width 4.25 mm
	Automotive Standard AEC-Q101

Datasheet NVMYS5D3N04CTWG

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

onsemi NVMYS5D3N04C Type N-Channel MOSFET, 71 A, 40 V Enhancement, 4-Pin LFPAK

관련된 링크들