onsemi NVMYS5D3N04C Type N-Channel MOSFET, 71 A, 40 V Enhancement, 4-Pin LFPAK
- RS 제품 번호:
- 195-2522
- 제조사 부품 번호:
- NVMYS5D3N04CTWG
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩2,058,600.00
마지막 RS 재고
- 최종적인 3,000 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩686.20 | ₩2,060,856.00 |
| 6000 - 9000 | ₩673.04 | ₩2,019,684.00 |
| 12000 + | ₩659.88 | ₩1,979,076.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 195-2522
- 제조사 부품 번호:
- NVMYS5D3N04CTWG
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 71A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | NVMYS5D3N04C | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.15mm | |
| Width | 4.25 mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 71A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series NVMYS5D3N04C | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.15mm | ||
Width 4.25 mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
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