Wolfspeed C3M Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 4-Pin TO-247
- RS 제품 번호:
- 192-3519
- 제조사 부품 번호:
- C3M0075120K
- 제조업체:
- Wolfspeed
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Subtotal (1 unit)*
₩31,997.60
재고있음
- 추가로 2025년 12월 29일 부터 29 개 단위 배송
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|---|---|
| 1 + | ₩31,997.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 192-3519
- 제조사 부품 번호:
- C3M0075120K
- 제조업체:
- Wolfspeed
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Wolfspeed | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | C3M | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 19 V | |
| Maximum Power Dissipation Pd | 113.6W | |
| Forward Voltage Vf | 4.5V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Width | 5.21 mm | |
| Height | 23.6mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Wolfspeed | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series C3M | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 19 V | ||
Maximum Power Dissipation Pd 113.6W | ||
Forward Voltage Vf 4.5V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Width 5.21 mm | ||
Height 23.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.
Minimum of 1200V Vbr across entire operating temperature range
New low-impedance package with driver source
> 8mm of creepage/clearance between drain and source
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
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