Wolfspeed C3M Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 3-Pin TO-247 C3M0075120D
- RS 제품 번호:
- 192-3376
- 제조사 부품 번호:
- C3M0075120D
- 제조업체:
- Wolfspeed
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대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩627,168.00
재고있음
- 120 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 30 | ₩20,905.60 | ₩627,151.08 |
| 60 - 90 | ₩20,277.68 | ₩608,330.40 |
| 120 + | ₩19,668.56 | ₩590,073.72 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 192-3376
- 제조사 부품 번호:
- C3M0075120D
- 제조업체:
- Wolfspeed
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Wolfspeed | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | C3M | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 113.6W | |
| Forward Voltage Vf | 4.5V | |
| Maximum Gate Source Voltage Vgs | 19 V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Wolfspeed | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series C3M | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 113.6W | ||
Forward Voltage Vf 4.5V | ||
Maximum Gate Source Voltage Vgs 19 V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as inverter and charger applications. Download our LTspice models to get started or click here to request more information.
Minimum of 1200V Vbr across entire operating temperature range
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
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