제조사부품번호

Wolfspeed C3M Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 4-Pin TO-247 C3M0075120K

RS 제품 번호:: 192-3375
제조사 부품 번호:: C3M0075120K
제조업체:: Wolfspeed

Wolfspeed C3M Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 4-Pin TO-247 C3M0075120K

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩642,565.20

일시적 품절

2026년 7월 24일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 30	₩21,418.84	₩642,582.12
60 - 90	₩20,777.76	₩623,315.88
120 +	₩20,153.60	₩604,608.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 192-3375
제조사 부품 번호:: C3M0075120K
제조업체:: Wolfspeed

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모두 선택	제품 정보	값
	브랜드	Wolfspeed
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	1200V
	Series	C3M
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	75mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	53nC
	Maximum Power Dissipation Pd	113.6W
	Forward Voltage Vf	4.5V
	Maximum Gate Source Voltage Vgs	19 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	23.6mm
	Length	16.13mm
	Standards/Approvals	No
	Width	5.21 mm
	Automotive Standard	No

	모두 선택
	브랜드 Wolfspeed
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 1200V
	Series C3M
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 75mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 53nC
	Maximum Power Dissipation Pd 113.6W
	Forward Voltage Vf 4.5V
	Maximum Gate Source Voltage Vgs 19 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 23.6mm
	Length 16.13mm
	Standards/Approvals No
	Width 5.21 mm
	Automotive Standard No

Wolfspeed extends its leadership in SiC technology by introducing advanced SiC MOSFET technology in new low inductance discrete packing. The newly released packages allow engineers to take full advantage of the high-frequency capability of the latest C3MTM planar MOSFET chips. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. This device features low on-resistance combined with a low gate charge, making it ideally suited for three-phase, bridgeless PFC topologies as well as AC-AC converters and chargers.

Minimum of 1200V Vbr across entire operating temperature range

New low-impedance package with driver source

> 8mm of creepage/clearance between drain and source

High-speed switching with low output capacitance

High blocking voltage with low RDS(on)

Fast intrinsic diode with low reverse recovery (Qrr)

Easy to parallel and simple to drive

Wolfspeed C3M Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 4-Pin TO-247 C3M0075120K

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