onsemi N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220
- RS 제품 번호:
- 189-0263
- 제조사 부품 번호:
- NTP150N65S3HF
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tube of 50 units)*
₩243,000.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩4,860.00 | ₩243,040.00 |
| 100 - 150 | ₩4,764.00 | ₩238,200.00 |
| 200 + | ₩4,668.00 | ₩233,400.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 189-0263
- 제조사 부품 번호:
- NTP150N65S3HF
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 192W | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Height | 16.3mm | |
| Standards/Approvals | No | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 192W | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Height 16.3mm | ||
Standards/Approvals No | ||
Width 4.7mm | ||
Automotive Standard No | ||
SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
700 V @ TJ = 150 °C
Ultra Low Gate Charge (Typ. Qg = 43 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 400 pF)
Higher system reliability at low temperature operation
Excellent body diode performance (low Qrr, robust body diode)
Optimized Capacitance
Typ. RDS(on) = 121 mΩ
Lower switching loss
Lower switching loss
Higher system reliability in LLC and Phase shift full bridge circuit
Lower peak Vds and lower Vgs oscillation
Applications
Telecommunication
Cloud system
Industrial
End Products
Telecom power
Server power
EV charger
Solar / UPS
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