onsemi NTP Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220 NTP082N65S3HF
- RS 제품 번호:
- 214-8911
- 제조사 부품 번호:
- NTP082N65S3HF
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩14,626.40
재고있음
- 772 개 단위 배송 준비 완료
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 12 | ₩7,313.20 | ₩14,626.40 |
| 14 - 24 | ₩7,134.60 | ₩14,269.20 |
| 26 + | ₩7,021.80 | ₩14,043.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 214-8911
- 제조사 부품 번호:
- NTP082N65S3HF
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | NTP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 313W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 4.83mm | |
| Width | 15.75 mm | |
| Length | 10.53mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series NTP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 313W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 4.83mm | ||
Width 15.75 mm | ||
Length 10.53mm | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET is brand−new high voltage super−junction MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Pb−Free
RoHS compliant
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