onsemi NTP067N Type N-Channel MOSFET, 40 A, 650 V Enhancement, 3-Pin TO-220 NTP067N65S3H
- RS 제품 번호:
- 221-6742
- 제조사 부품 번호:
- NTP067N65S3H
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 2 units)*
₩23,800.00
공급 부족
공급망의 제한으로 인해 재고가 확보되는 대로 할당됩니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩11,900.00 | ₩23,800.00 |
| 10 - 98 | ₩11,680.00 | ₩23,360.00 |
| 100 - 248 | ₩11,470.00 | ₩22,940.00 |
| 250 - 498 | ₩11,270.00 | ₩22,540.00 |
| 500 + | ₩11,060.00 | ₩22,120.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 221-6742
- 제조사 부품 번호:
- NTP067N65S3H
- 제조업체:
- onsemi
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTP067N | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 67mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 266W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Height | 16.3mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTP067N | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 67mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 266W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Height 16.3mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 691 pF
100% avalanche tested
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