Vishay SiSHA10DN N-Channel MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISHA10DN-T1-GE3

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RS 제품 번호:
188-4897
제조사 부품 번호:
SISHA10DN-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212

Series

SiSHA10DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-16V, +20V

Maximum Power Dissipation Pd

39W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

No

Height

930μm

Width

3.3mm

Automotive Standard

No

N-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

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