Vishay Common Drain TrenchFET Gen IV 2 N-Channel Power MOSFET, 60 A, 25 V Enhancement, 8-Pin PowerPAK 1212

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RS 제품 번호:
188-4890
제조사 부품 번호:
SISF02DN-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

25V

Package Type

PowerPAK 1212

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

69.4W

Typical Gate Charge Qg @ Vgs

37nC

Maximum Gate Source Voltage Vgs

-12V, +16V

Transistor Configuration

Common Drain

Maximum Operating Temperature

+150°C

Height

0.75mm

Length

3.4mm

Standards/Approvals

No

Width

3.4mm

Number of Elements per Chip

2

Automotive Standard

No

Common Drain Dual N-Channel 25 V (S1-S2) MOSFET.

TrenchFET® Gen IV power MOSFET

Very low source-to-source on resistance

Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package

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