Vishay TrenchFET Gen IV N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK 1212-8 SIS476DN-T1-GE3

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RS 제품 번호:
180-7361
제조사 부품 번호:
SIS476DN-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET Gen IV

Package Type

PowerPAK 1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0035Ω

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

52W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

150°C

Length

3.61mm

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Width

3.61mm

Height

1.12mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay SIS476DN is a N-channel MOSFET having drain to source(Vds) voltage of 30V. The gate to source voltage(VGS) is 20V. It is having Power PAK 1212-8 package. It offers drain to source resistance (RDS.) 0.0025ohms at 10VGS and 0.0035ohms at 4.5VGS. Maximum drain current 40A.

Trench FET gen IV power MOSFET

100 % Rg and UIS tested

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