onsemi NVMJS1D3N04C N-Channel MOSFET, 235 A, 40 V Enhancement, 8-Pin LFPAK
- RS 제품 번호:
- 185-8157
- 제조사 부품 번호:
- NVMJS1D3N04CTWG
- 제조업체:
- onsemi
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 185-8157
- 제조사 부품 번호:
- NVMJS1D3N04CTWG
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 235A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NVMJS1D3N04C | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 128W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4.9mm | |
| Height | 1.2mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 235A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NVMJS1D3N04C | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 128W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4.9mm | ||
Height 1.2mm | ||
Automotive Standard AEC-Q101 | ||
비준수
- COO (Country of Origin):
- PH
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK8 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free
관련된 링크들
- onsemi NVMJS1D3N04C N-Channel MOSFET, 235 A, 40 V Enhancement, 8-Pin LFPAK NVMJS1D3N04CTWG
- onsemi NVMJS1D5N04CL N-Channel MOSFET, 200 A, 40 V Enhancement, 8-Pin LFPAK NVMJS1D5N04CLTWG
- onsemi NVMJS1D5N04CL N-Channel MOSFET, 200 A, 40 V Enhancement, 8-Pin LFPAK
- onsemi NVMJS2D5N06CL N-Channel MOSFET, 164 A, 60 V Enhancement, 8-Pin LFPAK NVMJS2D5N06CLTWG
- onsemi NVMYS5D3N04C N-Channel MOSFET, 71 A, 40 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS1D3N04C N-Channel MOSFET, 252 A, 40 V Enhancement, 4-Pin LFPAK
- onsemi NVMYS8D0N04C N-Channel MOSFET, 49 A, 40 V Enhancement, 4-Pin LFPAK
- onsemi NTMYS2D4N04C N-Channel MOSFET, 138 A, 40 V Enhancement, 4-Pin LFPAK
