ROHM RUF025N02 N-Channel MOSFET, 2.5 A, 20 V, 3-Pin SOT-323 RUF025N02TL
- RS 제품 번호:
- 183-5146
- 제조사 부품 번호:
- RUF025N02TL
- 제조업체:
- ROHM
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대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩1,099,800.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 12000 | ₩366.60 | ₩1,097,544.00 |
| 15000 + | ₩359.08 | ₩1,075,548.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 183-5146
- 제조사 부품 번호:
- RUF025N02TL
- 제조업체:
- ROHM
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.5 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-323 | |
| Series | RUF025N02 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 160 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.3V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 800 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±10 V | |
| Length | 2.1mm | |
| Maximum Operating Temperature | 150 °C | |
| Width | 1.8mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 5 nC @ 4.5 V | |
| Height | 0.82mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-323 | ||
Series RUF025N02 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.3V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 800 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±10 V | ||
Length 2.1mm | ||
Maximum Operating Temperature 150 °C | ||
Width 1.8mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 5 nC @ 4.5 V | ||
Height 0.82mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- JP
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Low voltage(1.5V) drive type
Nch Small-signal MOSFET
Small Surface Mount Package
Pb Free
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