DiodesZetex DMN N-Channel MOSFET, 900 mA, 20 V Enhancement, 3-Pin X1-DFN DMN2450UFD-7
- RS 제품 번호:
- 182-7197
- 제조사 부품 번호:
- DMN2450UFD-7
- 제조업체:
- DiodesZetex
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (100 units, in packs of 100)*
₩14,400.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 100 - 700 | ₩144.00 | ₩14,500.00 |
| 800 - 1400 | ₩142.00 | ₩14,140.00 |
| 1500 + | ₩140.00 | ₩13,920.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 182-7197
- 제조사 부품 번호:
- DMN2450UFD-7
- 제조업체:
- DiodesZetex
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 900mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | X1-DFN | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 890mW | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.25mm | |
| Height | 480μm | |
| Standards/Approvals | No | |
| Width | 1.25mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 900mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type X1-DFN | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 890mW | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 150°C | ||
Length 1.25mm | ||
Height 480μm | ||
Standards/Approvals No | ||
Width 1.25mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V Max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Applications
Power Management Functions
Battery Operated Systems and Solid-State Relays
Load Switch
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