DiodesZetex DMN N-Channel MOSFET, 900 mA, 20 V Enhancement, 3-Pin X1-DFN DMN2310UFD-7
- RS 제품 번호:
- 246-7511
- 제조사 부품 번호:
- DMN2310UFD-7
- 제조업체:
- DiodesZetex
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대량 구매 할인 받기
50개 더 담고 2% 할인 받기
View bulk pricing optionsSubtotal (1 pack of 25 units)*
₩12,900.00
일시적 품절
- 2027년 1월 25일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* | 절감 |
|---|---|---|---|
| 25 - 25 | ₩516.00 | ₩12,880.00 | - |
| 50 - 75 | ₩502.00 | ₩12,560.00 | 2% |
| 100 - 225 | ₩492.00 | ₩12,280.00 | 4% |
| 250 - 975 | ₩480.00 | ₩11,980.00 | 6% |
| 1000 + | ₩468.00 | ₩11,680.00 | 9% |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 246-7511
- 제조사 부품 번호:
- DMN2310UFD-7
- 제조업체:
- DiodesZetex
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 900mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN | |
| Package Type | X1-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Maximum Power Dissipation Pd | 890mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.25mm | |
| Standards/Approvals | No | |
| Width | 1.25mm | |
| Height | 530μm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 900mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN | ||
Package Type X1-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Maximum Power Dissipation Pd 890mW | ||
Maximum Operating Temperature 150°C | ||
Length 1.25mm | ||
Standards/Approvals No | ||
Width 1.25mm | ||
Height 530μm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a dual N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN1212-3 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V and Maximum gate to source voltage is ±8 V It offers a ultra-small package size It has low input/output leakage
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