DiodesZetex DMN Type N-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin X2-DFN DMN2450UFB4-7R
- RS 제품 번호:
- 182-7146
- 제조사 부품 번호:
- DMN2450UFB4-7R
- 제조업체:
- DiodesZetex
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대량 구매 할인 기용 가능
Subtotal (1 pack of 250 units)*
₩26,790.00
일시적 품절
- 2026년 7월 13일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 250 - 500 | ₩107.16 | ₩26,790.00 |
| 750 - 1250 | ₩105.28 | ₩26,132.00 |
| 1500 + | ₩103.40 | ₩25,709.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 182-7146
- 제조사 부품 번호:
- DMN2450UFB4-7R
- 제조업체:
- DiodesZetex
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | X2-DFN | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 1.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 900mW | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.35mm | |
| Length | 1.05mm | |
| Width | 0.65 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type X2-DFN | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 1.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 900mW | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.35mm | ||
Length 1.05mm | ||
Width 0.65 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Footprint of just 0.6mm2
– Thirteen Times Smaller than SOT23
0.4mm Profile – Ideal for Low Profile Applications
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free
Halogen and Antimony Free. “Green” Device.
Applications
Load Switch
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