DiodesZetex DMN Type N-Channel MOSFET, 407 mA, 60 V Enhancement, 3-Pin X1-DFN
- RS 제품 번호:
- 182-6901
- 제조사 부품 번호:
- DMN62D1LFB-7B
- 제조업체:
- DiodesZetex
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대량 구매 할인 기용 가능
Subtotal (1 reel of 10000 units)*
₩770,800.00
현재 액세스할 수 없는 재고 정보
수량 | 한팩당 | 릴당* |
|---|---|---|
| 10000 - 10000 | ₩77.08 | ₩763,280.00 |
| 20000 - 90000 | ₩73.32 | ₩738,840.00 |
| 100000 + | ₩65.80 | ₩665,520.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 182-6901
- 제조사 부품 번호:
- DMN62D1LFB-7B
- 제조업체:
- DiodesZetex
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 407mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | X1-DFN | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.45nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 1.07mm | |
| Width | 0.67 mm | |
| Height | 0.48mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 407mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type X1-DFN | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.45nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 1.07mm | ||
Width 0.67 mm | ||
Height 0.48mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free
Halogen and Antimony Free. “Green” Device
Application
Load Switch
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