제조사부품번호

Vishay Single 1 Type P-Channel MOSFET, 1.8 A, 400 V, 3-Pin TO-252 IRFR9310PBF

RS 제품 번호:: 180-8772
제조사 부품 번호:: IRFR9310PBF
제조업체:: Vishay

Vishay Single 1 Type P-Channel MOSFET, 1.8 A, 400 V, 3-Pin TO-252 IRFR9310PBF

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Subtotal (1 pack of 10 units)*

₩16,100.00

900 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
10 - 10	₩1,610.00	₩16,100.00
20 +	₩1,572.00	₩15,720.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 180-8772
제조사 부품 번호:: IRFR9310PBF
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1.8A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-252
	Mount Type	Surface, Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	7Ω
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	50W
	Typical Gate Charge Qg @ Vgs	13nC
	Transistor Configuration	Single
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS-compliant
	Length	9.65mm
	Number of Elements per Chip	1
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1.8A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-252
	Mount Type Surface, Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 7Ω
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 50W
	Typical Gate Charge Qg @ Vgs 13nC
	Transistor Configuration Single
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS-compliant
	Length 9.65mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET, 400V Drain Source Voltage, 50W Power Dissipation - IRFR9310PBF

This MOSFET is a P-channel transistor designed for high-voltage switching in power-electronic circuits. It is supplied in a TO-252 package and is suitable for surface-mount or through-hole assembly, offering a compact solution where a P-type device is required for high-voltage applications. The device operates across a wide temperature span and meets RoHS environmental standards.

Features and Benefits:

• 400V drain-to-source voltage for high-voltage switching capability
• 7Ω maximum Rds to limit conduction losses in low-current designs
• 13nC typical gate charge for fast gate-drive transitions
• 1.8A continuous drain current for moderate current requirements
• 50W maximum power dissipation for thermal headroom in power stages
• -55 to 150°C operating range for high-temperature deployment

Applications

• Suitable for high-voltage polarity protection circuits
• Ideal for P-channel high-side switching in power supplies
• Used with gate drivers requiring low gate-charge devices
• Can be used for industrial control electronics operating hot
• Appropriate for mixed-assembly boards combining surface-mount and through-hole components

What mounting options are available for fitting onto PCBs?

The device supports both surface-mount and through-hole mounting methods to accommodate varied board assembly practices.

How does the device perform under elevated ambient temperatures?

It is rated to operate up to 150°C, allowing use in designs exposed to high thermal stress when appropriate thermal management is applied.

What are the gate-drive voltage limits to consider during design?

The maximum gate-to-source voltage is ±20V, so gate-drive circuitry must constrain swings within this range.

Is this device composed of multiple elements on a single chip?

There is a single transistor element per chip, which simplifies current-sharing considerations in parallel arrangements.