Vishay IRFU9310 Type P-Channel Power MOSFET, -1.8 A, -400 V Enhancement, 3-Pin IPAK IRFU9310PBF

RS 제품 번호:: 542-9967
제조사 부품 번호:: IRFU9310PBF
제조업체:: Vishay

Vishay IRFU9310 Type P-Channel Power MOSFET, -1.8 A, -400 V Enhancement, 3-Pin IPAK IRFU9310PBF

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 unit)*

₩3,640.00

추가로 2026년 8월 17일 부터 66 개 단위 배송
추가로 2026년 8월 24일 부터 13,286 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
1 - 18	₩3,640.00
19 - 37	₩3,580.00
38 +	₩3,540.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 542-9967
제조사 부품 번호:: IRFU9310PBF
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-1.8A
	Maximum Drain Source Voltage Vds	-400V
	Package Type	IPAK
	Series	IRFU9310
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	7Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	50W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	13nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-4V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	2.38mm
	Length	6.73mm
	Height	6.22mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -1.8A
	Maximum Drain Source Voltage Vds -400V
	Package Type IPAK
	Series IRFU9310
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 7Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 50W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 13nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -4V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 2.38mm
	Length 6.73mm
	Height 6.22mm
	Automotive Standard No

Vishay IRFU9310 Series Power MOSFET, -400V Maximum Drain Source Voltage, 50W Maximum Power Dissipation - IRFU9310PBF

This power MOSFET is a P-channel enhancement transistor designed for high-voltage switching applications where through-hole mounting is required. It operates over a wide temperature range and is RoHS-compliant, offering a compact IPAK package suited to circuits needing low continuous currents and robust voltage handling without surface-mount assembly.

Features and Benefits:

• Rated for -400V drain-source voltage enabling high-voltage switching
• Maximum continuous drain current of -1.8A supporting low-current loads
• Maximum dissipation 50W allowing higher power handling in thermal designs
• Drain-source resistance 7Ω reducing conduction losses at low currents
• Gate charge 13nC at 20V Vgs permitting predictable switching performance
• Operates from -55°C to 150°C for elevated temperature environments

Applications

• Suitable for high-voltage reverse-polarity protection circuits
• Ideal for valve or actuator control in industrial systems
• Used with discrete switching stages in power supplies
• Can be used for telecom line protection in legacy equipment
• Used for low-current load switching in instrumentation

What package type will I mount on a PCB for prototyping?

It is supplied in an IPAK through-hole package with three pins for conventional soldering and prototyping on drilled boards.

How should thermal limits guide heatsinking in designs?

The device’s 50W maximum dissipation requires a suitable heatsink or thermal path when switching near rated current or in elevated ambient temperatures to avoid exceeding junction limits.

What gate drive considerations are necessary for switching?

Expect a typical gate charge of 13nC at 20V Vgs

design gate drivers to supply sufficient charge quickly to meet desired switching speeds while managing gate-source voltage within ±20V.

Is it suitable for automotive electronics?

It is not specified as automotive grade

evaluate system requirements and environmental qualifications before use in vehicle applications.