Vishay TN2404K Type N, Type N-Channel MOSFET, 200 mA, 240 V Enhancement, 3-Pin SOT-23 TN2404K-T1-E3
- RS 제품 번호:
- 180-8155
- 제조사 부품 번호:
- TN2404K-T1-E3
- 제조업체:
- Vishay
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- RS 제품 번호:
- 180-8155
- 제조사 부품 번호:
- TN2404K-T1-E3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 240V | |
| Package Type | TO-236 | |
| Series | TN2404K | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 4.87nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Width | 2.64 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 240V | ||
Package Type TO-236 | ||
Series TN2404K | ||
Mount Type Surface, Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 4.87nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Width 2.64 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 240V and a maximum gate-source voltage of 20V. It has drain-source resistance of 4ohms at a gate-source voltage of 10V. It has a maximum power dissipation of 360mW and continuous drain current of 200mA. The minimum and a maximum driving voltage for this MOSFET is 2.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Easily driven without buffer
• Excellent thermal stability
• Full voltage operation
• Low error voltage
• Low input and output leakage
• Low offset voltage
• Low on resistance: 4ohms
• Low power/voltage driven
• Operating temperature ranges between -55°C and 150°C
• Secondary breakdown free: 260V
Applications
• High voltage drivers: relays, solenoids, lamps, hammers, displays, transistors, etc
• Motor control
• Power supply, converters
• Telephone mute switches, ringer circuits
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
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