제조사부품번호

Vishay TrenchFET Type P-Channel MOSFET, 7.2 A, 40 V Enhancement, 8-Pin SO-8 SI4447ADY-T1-GE3

RS 제품 번호:: 180-7948
제조사 부품 번호:: SI4447ADY-T1-GE3
제조업체:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 7.2 A, 40 V Enhancement, 8-Pin SO-8 SI4447ADY-T1-GE3

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대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩14,588.80

재고있음

추가로 2025년 12월 29일 부터 20 개 단위 배송
추가로 2026년 1월 05일 부터 3,240 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
20 - 620	₩729.44	₩14,607.60
640 - 1240	₩710.64	₩14,231.60
1260 +	₩699.36	₩14,006.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 180-7948
제조사 부품 번호:: SI4447ADY-T1-GE3
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	7.2A
	Maximum Drain Source Voltage Vds	40V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	62mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	11.8nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2.7W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Width	6.2 mm
	Height	1.75mm
	Length	5mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 7.2A
	Maximum Drain Source Voltage Vds 40V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 62mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 11.8nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2.7W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Width 6.2 mm
	Height 1.75mm
	Length 5mm
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 45mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 7.2A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switch

• Load switches

• Notebook PCs

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

Vishay TrenchFET Type P-Channel MOSFET, 7.2 A, 40 V Enhancement, 8-Pin SO-8 SI4447ADY-T1-GE3

Vishay MOSFET

Features and Benefits

Applications

Certifications

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