Vishay TrenchFET Type P-Channel MOSFET, 7.2 A, 40 V Enhancement, 8-Pin SO-8
- RS 제품 번호:
- 180-7289
- 제조사 부품 번호:
- SI4447ADY-T1-GE3
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩1,038,700.00
재고있음
- 추가로 2025년 12월 29일 부터 2,500 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 10000 | ₩415.48 | ₩1,037,290.00 |
| 12500 + | ₩406.08 | ₩1,016,610.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-7289
- 제조사 부품 번호:
- SI4447ADY-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 62mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.7W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 11.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Width | 6.2 mm | |
| Standards/Approvals | No | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 62mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.7W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 11.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Width 6.2 mm | ||
Standards/Approvals No | ||
Height 1.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 45mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 7.2A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Adaptor switch
• Load switches
• Notebook PCs
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
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