제조사부품번호

Vishay SiP32431DR Type P-Channel MOSFET, 1.2 A, 5.5 V, 6-Pin SC-70 SIP32431DR3-T1GE3

RS 제품 번호:: 180-7822
제조사 부품 번호:: SIP32431DR3-T1GE3
제조업체:: Vishay

Vishay SiP32431DR Type P-Channel MOSFET, 1.2 A, 5.5 V, 6-Pin SC-70 SIP32431DR3-T1GE3

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Subtotal (1 pack of 25 units)*

₩13,796.25

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수량	한팩당	한팩당*
25 - 725	₩551.85	₩13,786.50
750 - 1475	₩538.20	₩13,435.50
1500 +	₩530.40	₩13,240.50

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 180-7822
제조사 부품 번호:: SIP32431DR3-T1GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1.2A
	Maximum Drain Source Voltage Vds	5.5V
	Package Type	SC-70
	Series	SiP32431DR
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	147mΩ
	Maximum Power Dissipation Pd	250mW
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Standards/Approvals	No
	Width	2.2mm
	Length	2.15mm
	Height	1.1mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1.2A
	Maximum Drain Source Voltage Vds 5.5V
	Package Type SC-70
	Series SiP32431DR
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 147mΩ
	Maximum Power Dissipation Pd 250mW
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Standards/Approvals No
	Width 2.2mm
	Length 2.15mm
	Height 1.1mm
	Automotive Standard No

Datasheet

Vishay SiP32431DR Series MOSFET, 5.5V Maximum Drain Source Voltage, 1.2A Maximum Continuous Drain Current - SIP32431DR3-T1GE3

This MOSFET is a P‑channel surface‑mount transistor designed for low‑voltage switching in Compact electronic assemblies. It operates within a modest temperature range for typical industrial environments and is supplied in a small 6‑lead SMD package suited to dense board layouts. The device targets applications requiring controlled low‑current switching and modest power handling in automated and electronic systems.

Features and Benefits:

• Maximum drain‑source voltage 5.5V enables low‑voltage switching capability
• Continuous drain current rating 1.2A supports moderate load currents
• Drain‑source on‑resistance 147mΩ reduces conduction losses
• Power dissipation 250mW limits thermal rise under steady conditions
• Operating range -40 to 85°C permits use across common environments
• RoHS compliance simplifies end‑product material management

Applications

• Suitable for gate drive and level‑shifting in control modules
• Ideal for battery management low‑voltage disconnects
• Used for load switching in Compact automation sensors
• Can be used for signal‑path protection in measurement equipment
• Used with small power‑management circuits on dense PCBs

What mounting style does it use for PCB assembly?

It is a surface‑mount device in a six‑lead SC‑70‑6 package for automated placement.

How does the device manage thermal limits during continuous operation?

Its maximum steady power dissipation is 250mW, so board thermal design and copper area must match expected dissipation to maintain safe junction temperatures.

Is this device suitable for automotive system qualification?

It is not specified as automotive standard approved and should not be assumed for qualified vehicle systems.

What type of conduction does the transistor provide?

The component is a P‑channel MOSFET, providing P‑type channel conduction for high‑side or polarity‑sensitive switching.