Vishay ThunderFET N-Channel MOSFET, 11.3 A, 100 V Enhancement, 6-Pin SC-70 SIA416DJ-T1-GE3
- RS 제품 번호:
- 165-6297
- 제조사 부품 번호:
- SIA416DJ-T1-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
- RS 제품 번호:
- 165-6297
- 제조사 부품 번호:
- SIA416DJ-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 11.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SC-70 | |
| Series | ThunderFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 19W | |
| Forward Voltage Vf | 850mV | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.15mm | |
| Height | 750μm | |
| Standards/Approvals | No | |
| Width | 2.15mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 11.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SC-70 | ||
Series ThunderFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 19W | ||
Forward Voltage Vf 850mV | ||
Maximum Operating Temperature 150°C | ||
Length 2.15mm | ||
Height 750μm | ||
Standards/Approvals No | ||
Width 2.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
관련된 링크들
- Vishay ThunderFET N-Channel MOSFET, 11.3 A, 100 V Enhancement, 6-Pin SC-70 SIA416DJ-T1-GE3
- Vishay SiA461DJ Type P-Channel MOSFET, 12 A, 20 V Enhancement, 6-Pin SC-70 SIA461DJ-T1-GE3
- Vishay SiA471DJ Type P-Channel MOSFET, 30.3 A, 30 V Enhancement, 6-Pin SC-70 SiA471DJ-T1-GE3
- Vishay SIA N-Channel MOSFET, 31 A, 40 V Enhancement, 7-Pin SC-70 SIA4446DJ-T1-GE3
- Vishay SiA4263DJ Type P-Channel MOSFET, 12 A, 30 V PowerPAK SC-70 SIA4263DJ-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET, 12 A, 12 V Enhancement, 6-Pin SC-70 SIA447DJ-T1-GE3
- Vishay TrenchFET P-Channel MOSFET, -36 A, -20 V Enhancement, 6-Pin PowerPAK SC-70 SIA5213DJ-T1-GE3
- Vishay Siliconix TrenchFET N-Channel MOSFET, 12 A, 60 V Enhancement, 6-Pin SC-70-6L SiA106DJ-T1-GE3