Vishay TrenchFET Type N-Channel MOSFET, 3.1 A, 100 V Enhancement, 3-Pin SOT-23 SI2392ADS-T1-GE3
- RS 제품 번호:
- 180-7811
- 제조사 부품 번호:
- SI2392ADS-T1-GE3
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 pack of 20 units)*
₩13,836.80
단종되는 중
- 최종적인 1,380 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 20 - 740 | ₩691.84 | ₩13,818.00 |
| 760 - 1480 | ₩673.04 | ₩13,479.60 |
| 1500 + | ₩661.76 | ₩13,254.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-7811
- 제조사 부품 번호:
- SI2392ADS-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 189mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.64 mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 189mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 150°C | ||
Width 2.64 mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source resistance of 126mohm at a gate-source voltage of 10V. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. The MOSFET has a minimum and a maximum driving voltage of 4.5V and 10V respectively. It has continuous drain current of 3.1A and maximum power dissipation of 2.5W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Boost converters
• DC/DC converters
• LED backlighting in LCD TVs
• Load switch
• Power management for mobile computing
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
관련된 링크들
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