Vishay Type P-Channel MOSFET, 5.7 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8
- RS 제품 번호:
- 180-7317
- 제조사 부품 번호:
- SI7415DN-T1-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩4,534,560.00
일시적 품절
- 2026년 8월 17일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 12000 | ₩1,511.52 | ₩4,532,868.00 |
| 15000 + | ₩1,481.44 | ₩4,442,628.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-7317
- 제조사 부품 번호:
- SI7415DN-T1-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.065Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.61mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Width | 3.61 mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.065Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.61mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Width 3.61 mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 65mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3.8W and continuous drain current of 5.7A. It has a minimum and a maximum driving voltage 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Fast switching
• Halogen free
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Half-bridge motor drives
• High voltage non-synchronous buck converters
• Load switches
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
관련된 링크들
- Vishay Type P-Channel MOSFET, 5.7 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7415DN-T1-GE3
- Vishay Si7121DN Type P-Channel MOSFET, 9.6 A, 30 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Si7121DN Type P-Channel MOSFET, 9.6 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SI7121DN-T1-GE3
- Vishay Si7309DN Type P-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8
- Vishay Si7309DN Type P-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7309DN-T1-E3
- Vishay P-Channel MOSFET, 11.5 A, 30 V, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3
- Vishay Type N-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK 1212-8
- Vishay SiSS60DN Type N-Channel MOSFET, 181.8 A, 30 V Enhancement, 8-Pin PowerPAK 1212