제조사부품번호

onsemi SUPERFET III Type N-Channel Power MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220 FCP165N65S3

RS 제품 번호:: 178-4676
제조사 부품 번호:: FCP165N65S3
제조업체:: onsemi

onsemi SUPERFET III Type N-Channel Power MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220 FCP165N65S3

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩29,666.40

마지막 RS 재고

최종적인 685 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
5 - 10	₩5,933.28	₩29,666.40
15 - 20	₩5,786.64	₩28,933.20
25 +	₩5,700.16	₩28,500.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-4676
제조사 부품 번호:: FCP165N65S3
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	650V
	Series	SUPERFET III
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	165mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	154W
	Typical Gate Charge Qg @ Vgs	39nC
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Height	16.3mm
	Standards/Approvals	RoHS, Pb-Free, Halide Free
	Length	10.67mm
	Width	4.7 mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 650V
	Series SUPERFET III
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 165mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 154W
	Typical Gate Charge Qg @ Vgs 39nC
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Height 16.3mm
	Standards/Approvals RoHS, Pb-Free, Halide Free
	Length 10.67mm
	Width 4.7 mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.

700 V @ TJ = 150 °C

Ultra Low Gate Charge (Typ. Qg = 39 nC)

Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF)

Internal Gate Resistance: 4.6 Ω

Optimized Capacitance

Typ. RDS(on) = 140 mΩ

Benefits:

Higher system reliability at low temperature operation

Lower switching loss

Lower peak Vds and lower Vgs oscillation

Applications:

Computing

Consumer

Industrial

End Products:

Notebook / Desktop computer

Game Console

Telecom / Server

LCD / LED TV

LED Lighting / Ballast

Adapter

onsemi SUPERFET III Type N-Channel Power MOSFET, 19 A, 650 V Enhancement, 3-Pin TO-220 FCP165N65S3

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