제조사부품번호

onsemi FCP Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 178-4242
제조사 부품 번호:: FCP125N65S3R0
제조업체:: onsemi

onsemi FCP Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220

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대량 구매 할인 기용 가능

Subtotal (1 tube of 50 units)*

₩199,280.00

재고있음

추가로 2025년 12월 29일 부터 800 개 단위 배송

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수량	한팩당	Per Tube*
50 - 50	₩3,985.60	₩199,280.00
100 - 150	₩3,899.12	₩194,956.00
200 +	₩3,812.64	₩190,613.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-4242
제조사 부품 번호:: FCP125N65S3R0
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Series	FCP
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	181W
	Typical Gate Charge Qg @ Vgs	46nC
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Height	16.3mm
	Width	4.7 mm
	Standards/Approvals	No
	Length	10.67mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Series FCP
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 181W
	Typical Gate Charge Qg @ Vgs 46nC
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Height 16.3mm
	Width 4.7 mm
	Standards/Approvals No
	Length 10.67mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

700 V @ T_J = 150 °C

Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)

Ultra Low Gate Charge (Typ. Qg = 46 nC)

Optimized Capacitance

Typ. RDS(on) = 105 mΩ

Internal Gate Resistance: 0.5 Ω

Benefits:

Higher system reliability at low temperature operation

Low switching loss

Lower peak Vds and lower Vgs oscillation

Applications:

Computing

Consummer

Industrial

End Products:

Notebook / Desktop computer / Game console

Telecom / Server

LCD / LED TV

LED Lighting / Ballast

Adapter

onsemi FCP Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220

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