제조사부품번호

onsemi SUPERFET III Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin H-PSOF

RS 제품 번호:: 230-9082
제조사 부품 번호:: NTBL082N65S3HF
제조업체:: onsemi

onsemi SUPERFET III Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin H-PSOF

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대량 구매 할인 기용 가능

Subtotal (1 reel of 2000 units)*

₩15,103,920.00

마지막 RS 재고

최종적인 2,000 개 unit(s)이 배송 준비 됨

수량	한팩당	릴당*
2000 - 2000	₩7,551.96	₩15,103,544.00
4000 - 18000	₩7,401.56	₩14,801,616.00
20000 +	₩7,253.04	₩14,505,704.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 230-9082
제조사 부품 번호:: NTBL082N65S3HF
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	650V
	Package Type	H-PSOF
	Series	SUPERFET III
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	82mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	313W
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	79nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	13.28mm
	Standards/Approvals	Pb-Free Halide free non AEC-Q and PPAP
	Length	10.2mm
	Width	2.4 mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 650V
	Package Type H-PSOF
	Series SUPERFET III
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 82mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 313W
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 79nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 13.28mm
	Standards/Approvals Pb-Free Halide free non AEC-Q and PPAP
	Length 10.2mm
	Width 2.4 mm
	Automotive Standard No

Datasheet - NTBL082N65S3HF

The ON Semiconductor series SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency.

High power density

Kelvin Source Configuration

Low gate noise and switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Moisture Sensitivity Level 1 guarantee

High reliability in humid ambient condition

onsemi SUPERFET III Type N-Channel MOSFET, 40 A, 650 V Enhancement, 4-Pin H-PSOF

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