onsemi FCP Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220 FCP125N65S3R0

RS Stock No.:: 178-4662
Mfr. Part No.:: FCP125N65S3R0
Brand:: onsemi

onsemi FCP Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220 FCP125N65S3R0

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Subtotal (1 pack of 5 units)*

₩35,607.20

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Units	Per unit	Per Pack*
5 - 10	₩7,121.44	₩35,607.20
15 - 20	₩6,940.96	₩34,704.80
25 +	₩6,839.44	₩34,197.20

*price indicative

RS Stock No.:: 178-4662
Mfr. Part No.:: FCP125N65S3R0
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220
	Series	FCP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	46nC
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	181W
	Maximum Operating Temperature	150°C
	Width	4.7 mm
	Height	16.3mm
	Standards/Approvals	No
	Length	10.67mm
	Automotive Standard	No

	Select all
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220
	Series FCP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 46nC
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 181W
	Maximum Operating Temperature 150°C
	Width 4.7 mm
	Height 16.3mm
	Standards/Approvals No
	Length 10.67mm
	Automotive Standard No

COO (Country of Origin):: CN

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.

700 V @ T_J = 150 °C

Low Effective Output Capacitance (Typ. Coss(eff.) = 439 pF)

Ultra Low Gate Charge (Typ. Qg = 46 nC)

Optimized Capacitance

Typ. RDS(on) = 105 mΩ

Internal Gate Resistance: 0.5 Ω

Benefits:

Higher system reliability at low temperature operation

Low switching loss

Lower peak Vds and lower Vgs oscillation

Applications:

Computing

Consummer

Industrial

End Products:

Notebook / Desktop computer / Game console

Telecom / Server

LCD / LED TV

LED Lighting / Ballast

Adapter

onsemi FCP Type N-Channel MOSFET, 24 A, 650 V Enhancement, 3-Pin TO-220 FCP125N65S3R0

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