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onsemi SuperFET II Type N-Channel MOSFET, 17 A, 650 V Enhancement, 3-Pin TO-220 FCP190N65S3

RS 제품 번호:: 172-4632
제조사 부품 번호:: FCP190N65S3
제조업체:: onsemi

onsemi SuperFET II Type N-Channel MOSFET, 17 A, 650 V Enhancement, 3-Pin TO-220 FCP190N65S3

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대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩28,463.20

제한된 재고

10 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
10 - 190	₩2,846.32	₩28,463.20
200 - 390	₩2,776.76	₩27,767.60
400 +	₩2,731.64	₩27,316.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 172-4632
제조사 부품 번호:: FCP190N65S3
제조업체:: onsemi

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	17A
	Maximum Drain Source Voltage Vds	650V
	Series	SuperFET II
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	144W
	Typical Gate Charge Qg @ Vgs	33nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	10.67mm
	Width	4.7 mm
	Height	16.3mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 17A
	Maximum Drain Source Voltage Vds 650V
	Series SuperFET II
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 144W
	Typical Gate Charge Qg @ Vgs 33nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 10.67mm
	Width 4.7 mm
	Height 16.3mm
	Automotive Standard No

COO (Country of Origin):: CN

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 30 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)

Lower switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Internal Gate resistance: 7.0 ohm

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 170 mΩ

onsemi SuperFET II Type N-Channel MOSFET, 17 A, 650 V Enhancement, 3-Pin TO-220 FCP190N65S3

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