Vishay IRFBE30 N-Channel Power MOSFET, 4.1 A, 800 V Enhancement, 3-Pin TO-220AB IRFBE30PBF

RS 제품 번호:: 178-0818
제조사 부품 번호:: IRFBE30PBF
제조업체:: Vishay

Vishay IRFBE30 N-Channel Power MOSFET, 4.1 A, 800 V Enhancement, 3-Pin TO-220AB IRFBE30PBF

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Subtotal (1 tube of 50 units)*

₩147,600.00

추가로 2026년 10월 05일 부터 1,250 개 단위 배송

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수량	한팩당	Per Tube*
50 - 50	₩2,952.00	₩147,640.00
100 - 150	₩2,888.00	₩144,420.00
200 +	₩2,824.00	₩141,220.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 178-0818
제조사 부품 번호:: IRFBE30PBF
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-220AB
	Series	IRFBE30
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	78nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Forward Voltage Vf	1.8V
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Operating Temperature	150°C
	Width	4.7mm
	Standards/Approvals	RoHS
	Length	10.41mm
	Height	9.01mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-220AB
	Series IRFBE30
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 78nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Forward Voltage Vf 1.8V
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Operating Temperature 150°C
	Width 4.7mm
	Standards/Approvals RoHS
	Length 10.41mm
	Height 9.01mm
	Automotive Standard No

Datasheet

Vishay IRFBE30 Series Power MOSFET, 800V Drain‑Source Voltage, 4.1A Continuous Drain Current - IRFBE30PBF

This power MOSFET is a high-voltage N-channel transistor designed for switching and amplification tasks in demanding electronic systems. It operates across a broad temperature span and is supplied in a through-hole TO-220AB package with three pins, making it suitable for serviceable power designs where thermal handling and ease of mounting are priorities.

Features and Benefits:

• 800V drain-source rating enables high-voltage switching
• 4.1A continuous drain current supports moderate load currents
• 125W power dissipation allows substantial heat handling
• 3Ω maximum Rds(on) simplifies drive requirements at low switching speeds
• 78nC typical gate charge reduces gate-drive energy demands
• 20V gate-source limit protects gate under normal control voltages

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power in instrumentation
• Used with discrete linear regulators requiring high Vds
• Can be used for industrial motor control at moderate currents
• Suitable for through-hole prototypes and repair work

What temperature extremes can it withstand in operation?

It is specified to operate from -55°C up to 150°C, supporting applications exposed to wide ambient variations.

How is the component mounted and connected on a circuit?

It uses a through-hole TO-220AB package with three pins for straightforward PCB mounting and conventional heatsinking attachment.

What gate-drive considerations should be observed?

Keep the gate-drive amplitude within a 20V maximum to avoid exceeding the gate-source voltage rating and design drive circuitry to supply gate charge around 78nC for effective switching.

What type of conduction mode does it employ?

It is an enhancement-mode N-channel device, requiring a positive gate voltage relative to source to conduct.