Vishay IRFBG30 N-Channel Power MOSFET, 3.1 A, 1 kV Enhancement, 3-Pin TO-220AB IRFBG30PBF

RS 제품 번호:: 541-1146
Distrelec 제품 번호:: 171-15-229
제조사 부품 번호:: IRFBG30PBF
제조업체:: Vishay

Vishay IRFBG30 N-Channel Power MOSFET, 3.1 A, 1 kV Enhancement, 3-Pin TO-220AB IRFBG30PBF

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Subtotal (1 unit)*

₩5,160.00

추가로 2026년 10월 05일 부터 689 개 단위 배송
추가로 2026년 10월 12일 부터 698 개 단위 배송

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수량	한팩당
1 - 12	₩5,160.00
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RS 제품 번호:: 541-1146
Distrelec 제품 번호:: 171-15-229
제조사 부품 번호:: IRFBG30PBF
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	3.1A
	Maximum Drain Source Voltage Vds	1kV
	Package Type	TO-220AB
	Series	IRFBG30
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	80nC
	Forward Voltage Vf	1.8V
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Power Dissipation Pd	125W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	10.41mm
	Standards/Approvals	RoHS
	Width	4.7mm
	Height	9.01mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 3.1A
	Maximum Drain Source Voltage Vds 1kV
	Package Type TO-220AB
	Series IRFBG30
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 80nC
	Forward Voltage Vf 1.8V
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Power Dissipation Pd 125W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 10.41mm
	Standards/Approvals RoHS
	Width 4.7mm
	Height 9.01mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay IRFBG30 Series Power MOSFET, 1000V Maximum Drain Source Voltage, 125W Maximum Power Dissipation - IRFBG30PBF

This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power conversion in industrial electronic systems. It is supplied in a through-hole TO-220AB package and operates across a wide thermal range, making it suitable for demanding environments where sustained power handling and robust voltage tolerance are required.

Features and Benefits:

• 1000V drain-source rating enables high-voltage switching applications
• 125W maximum dissipation permits sustained power handling
• 5Ω maximum Rds(on) supports controlled conduction losses
• 3.1A continuous drain current suits moderate current loads
• 80nC typical gate charge facilitates predictable gate-drive requirements
• -55°C to 150°C operating range ensures wide-temperature reliability

Applications

• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive gate stages
• Used with avalanche protection in energy-management circuits
• Can be used for isolated switching in mains-related equipment
• Suitable for lab and prototyping through-hole assembly

What gate-voltage limitations should be observed during design?

The device must not exceed a gate-source voltage of 20V to prevent gate-oxide stress.

How should thermal considerations be handled on a PCB-mounted assembly?

Mounting in a TO-220AB configuration with a suitable heatsink and low-thermal-resistance fastening improves heat transfer for the 125W dissipation rating.

What conduction behaviour can be expected at high drain voltages?

With a maximum drain-source voltage of 1000V and a maximum continuous drain current of 3.1A, designers should size snubbers and protection to manage switching transients and limit peak stress.

Are there constraints on package mounting or pin count for hardware layouts?

The part uses a three-pin through-hole arrangement, allowing straightforward insertion and mechanical fixation for prototyping or repair.