onsemi NVD5C464N Type N-Channel MOSFET, 59 A, 40 V Enhancement, 4-Pin TO-252 NVD5C464NT4G
- RS 제품 번호:
- 172-3367
- 제조사 부품 번호:
- NVD5C464NT4G
- 제조업체:
- onsemi
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View bulk pricing optionsSubtotal (1 pack of 25 units)*
₩66,350.00
일시적 품절
- 2027년 8월 30일 부터 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 25 - 600 | ₩2,654.00 | ₩66,360.00 |
| 625 - 1225 | ₩2,590.00 | ₩64,740.00 |
| 1250 + | ₩2,536.00 | ₩63,400.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 172-3367
- 제조사 부품 번호:
- NVD5C464NT4G
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | NVD5C464N | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 40W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.25mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series NVD5C464N | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 40W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Height 2.25mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.
700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 259 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)
Lower switching loss
Excellent body diode performance (low Qrr, robust body diode)
Higher system reliability in LLC and Phase shift full bridge circuit
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 23 mΩ
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