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onsemi NVD5C464N Type N-Channel MOSFET, 59 A, 40 V Enhancement, 4-Pin TO-252

RS 제품 번호:: 172-3318
제조사 부품 번호:: NVD5C464NT4G
제조업체:: onsemi

onsemi NVD5C464N Type N-Channel MOSFET, 59 A, 40 V Enhancement, 4-Pin TO-252

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대량 구매 할인 기용 가능

Subtotal (1 reel of 2500 units)*

₩3,440,400.00

일시적 품절

2026년 6월 22일 부터 배송

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수량	한팩당	릴당*
2500 - 2500	₩1,376.16	₩3,438,050.00
5000 - 7500	₩1,347.96	₩3,368,960.00
10000 +	₩1,319.76	₩3,301,750.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 172-3318
제조사 부품 번호:: NVD5C464NT4G
제조업체:: onsemi

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모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	59A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-252
	Series	NVD5C464N
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	5.8mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	20nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	40W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	175°C
	Height	2.25mm
	Standards/Approvals	No
	Width	6.22 mm
	Length	6.73mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 59A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-252
	Series NVD5C464N
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 5.8mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 20nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 40W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 175°C
	Height 2.25mm
	Standards/Approvals No
	Width 6.22 mm
	Length 6.73mm
	Automotive Standard AEC-Q101

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 259 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)

Lower switching loss

Excellent body diode performance (low Qrr, robust body diode)

Higher system reliability in LLC and Phase shift full bridge circuit

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 23 mΩ

onsemi NVD5C464N Type N-Channel MOSFET, 59 A, 40 V Enhancement, 4-Pin TO-252

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