Infineon IPB020N10N5 Type N-Channel MOSFET, 176 A, 100 V Enhancement, 5-Pin TO-263 IPB020N10N5ATMA1
- RS 제품 번호:
- 171-1955
- 제조사 부품 번호:
- IPB020N10N5ATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 5 units)*
₩67,560.00
재고있음
- 3,150 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 245 | ₩13,512.00 | ₩67,560.00 |
| 250 - 495 | ₩13,168.00 | ₩65,840.00 |
| 500 + | ₩12,972.00 | ₩64,860.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 171-1955
- 제조사 부품 번호:
- IPB020N10N5ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 176A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPB020N10N5 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 168nC | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Length | 10.31mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 176A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPB020N10N5 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 168nC | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Length 10.31mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon IPB020N10N5 Series MOSFET, 100V Maximum Drain Source Voltage, 176A Maximum Continuous Drain Current - IPB020N10N5ATMA1
This MOSFET is a high-current N-channel enhancement device designed for surface-mount power conversion and switching duties in demanding thermal environments. It delivers low on-resistance and a modest forward voltage to support efficient energy transfer, while its package and pin count suit automated assembly and heat-management strategies.
Features and Benefits:
• 2.5mΩ Rds(on) reduces conduction losses and improves efficiency
• 100V drain rating enables medium-voltage system use
• 176A continuous current capacity supports heavy-load switching
• 168nC typical gate charge optimises turn-on and turn-off control
• 375W power dissipation allows sustained high-power operation
• Wide operating range from -55°C to 175°C tolerates harsh temperatures
• 100V drain rating enables medium-voltage system use
• 176A continuous current capacity supports heavy-load switching
• 168nC typical gate charge optimises turn-on and turn-off control
• 375W power dissipation allows sustained high-power operation
• Wide operating range from -55°C to 175°C tolerates harsh temperatures
Applications
• Suitable for synchronous buck converter power stages
• Ideal for motor-drive half-bridge configurations
• Used with server power supplies and telecom rectifiers
• Can be used for battery management and high-current switching
• Suitable for industrial inverters and traction auxiliary systems
• Ideal for motor-drive half-bridge configurations
• Used with server power supplies and telecom rectifiers
• Can be used for battery management and high-current switching
• Suitable for industrial inverters and traction auxiliary systems
What mounting method does it require for PCB assembly?
It is provided in a TO-263 surface-mount package intended for reflow soldering onto copper-landed PCBs to facilitate thermal conduction.
How does the gate voltage tolerance affect drive circuitry choice?
The gate-source rating permits drive amplitudes up to 20V, so gate drivers should be selected to avoid exceeding that limit while delivering sufficient Vgs for low Rds(on).
What thermal management considerations are recommended?
Given the 375W dissipation capability, designers should use adequate copper area, thermal vias and heat-sinking to extract heat from the package during continuous high-current operation.
How many connections are available for circuit integration?
The device has five pins, allowing for conventional power and gate interfacing in multi-pin TO-263 layouts.
관련된 링크들
- Infineon IPB020N10N5 Type N-Channel MOSFET, 176 A, 100 V Enhancement, 5-Pin TO-263
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V P, 3-Pin TO-263 IPB020N08N5ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET, 176 A, 100 V, 3-Pin PG-TO263-3 IPB018N10N5ATMA1
- Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263 IPB180N10S402ATMA1
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 7-Pin TO-263 IPB017N10N5ATMA1
- Infineon iPB Type N-Channel MOSFET, 166 A, 100 V N, 7-Pin TO-263 IPB032N10N5ATMA1
- Infineon iPB Type N-Channel MOSFET, 120 A, 100 V N, 3-Pin TO-263 IPB020N10N5LFATMA1
- Infineon iPB Type N-Channel MOSFET, 180 A, 100 V Enhancement TO-263 IPB180N10S403ATMA1
