Infineon IPB020N10N5 Type N-Channel MOSFET, 176 A, 100 V Enhancement, 5-Pin TO-263 IPB020N10N5ATMA1
- RS 제품 번호:
- 171-1955
- 제조사 부품 번호:
- IPB020N10N5ATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩43,240.00
재고있음
- 3,760 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 245 | ₩8,648.00 | ₩43,240.00 |
| 250 - 495 | ₩8,429.92 | ₩42,149.60 |
| 500 + | ₩8,302.08 | ₩41,510.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 171-1955
- 제조사 부품 번호:
- IPB020N10N5ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 176A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPB020N10N5 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 168nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.31mm | |
| Height | 4.57mm | |
| Width | 11.05 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 176A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPB020N10N5 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 168nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.31mm | ||
Height 4.57mm | ||
Width 11.05 mm | ||
Automotive Standard No | ||
The Infineon IPB020N10N5 is optiMOS 5 100V power MOSFET in D2PAK package with 22% lower RDS(on). Its especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
관련된 링크들
- Infineon IPB020N10N5 Type N-Channel MOSFET, 176 A, 100 V Enhancement, 5-Pin TO-263
- Infineon OptiMOS SiC N-Channel MOSFET, 176 A, 100 V, 3-Pin PG-TO263-3 IPB018N10N5ATMA1
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V P, 3-Pin TO-263 IPB020N08N5ATMA1
- Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263 IPB180N10S402ATMA1
- Infineon iPB Type N-Channel MOSFET, 166 A, 100 V N, 7-Pin TO-263 IPB032N10N5ATMA1
- Infineon iPB Type N-Channel MOSFET, 273 A, 100 V N, 7-Pin TO-263 IPB017N10N5ATMA1
- Infineon iPB Type N-Channel MOSFET, 120 A, 100 V N, 3-Pin TO-263 IPB020N10N5LFATMA1
- Infineon iPB Type N-Channel MOSFET, 180 A, 100 V Enhancement TO-263 IPB180N10S403ATMA1