Infineon IPB020N10N5 Type N-Channel MOSFET, 176 A, 100 V Enhancement, 5-Pin TO-263
- RS 제품 번호:
- 170-2293
- 제조사 부품 번호:
- IPB020N10N5ATMA1
- 제조업체:
- Infineon
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Subtotal (1 reel of 1000 units)*
₩4,414,240.00
재고있음
- 3,000 개 단위 배송 준비 완료
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 1000 - 4000 | ₩4,414.24 | ₩4,413,676.00 |
| 5000 + | ₩4,325.88 | ₩4,325,316.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 170-2293
- 제조사 부품 번호:
- IPB020N10N5ATMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 176A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | IPB020N10N5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 168nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.31mm | |
| Height | 4.57mm | |
| Width | 11.05 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 176A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series IPB020N10N5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 168nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Length 10.31mm | ||
Height 4.57mm | ||
Width 11.05 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IPB020N10N5 is optiMOS 5 100V power MOSFET in D2PAK package with 22% lower RDS(on). Its especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
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