Infineon BSC12DN20NS3 G Type N-Channel MOSFET, 11.3 A, 200 V Enhancement, 8-Pin TDSON BSC12DN20NS3GATMA1

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포장 옵션
RS 제품 번호:
171-1952
제조사 부품 번호:
BSC12DN20NS3GATMA1
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11.3A

Maximum Drain Source Voltage Vds

200V

Package Type

TDSON

Series

BSC12DN20NS3 G

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

50W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

6.5nC

Maximum Operating Temperature

150°C

Length

5.35mm

Height

1.1mm

Standards/Approvals

No

Automotive Standard

No

The Infineon BSC12DN20NS3 G 200V OptiMOS products are performance leading Benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.

Highest efficiency

Highest power density

Lowest board space consumption

Minimal device paralleling required

System cost improvement

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