Infineon BSC16DN25NS3GATMA1, N-Channel Single MOSFET, 10.9 A, 8-Pin PG-TDSON-8, Through Hole

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  • 2027년 11월 04일 부터 배송
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RS 제품 번호:
273-5239
제조사 부품 번호:
BSC16DN25NS3GATMA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Maximum Continuous Collector Current Ic

10.9A

Maximum Power Dissipation Pd

62.5W

Number of Transistors

1

Configuration

Single

Package Type

PG-TDSON-8

Mount Type

Through Hole

Channel Type

N

Pin Count

8

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Width

6.1mm

Standards/Approvals

IEC 61249-2-21

Height

1.15mm

Length

5.1mm

Automotive Standard

No

Infineon MOSFET, 62.5W Maximum Power Dissipation, 10.9A Maximum Continuous Collector Current - BSC16DN25NS3GATMA1


This single N-channel transistor is a through-hole power MOSFET designed for high thermal and current handling in industrial assemblies. It operates across a broad temperature span and is supplied in an 8-pin PG-TDSON package suitable for boards requiring a robust discrete switching device. The component is intended for applications where continuous current and power dissipation are primary concerns.

Features and Benefits:


• 62.5W maximum power dissipation provides sustained high-load handling
• 10.9A continuous collector current supports heavy-current switching
• N-channel channel type enables low-side switching configurations
• Through-hole mount type simplifies manual assembly and prototyping
• IEC 61249-2-21 compliance aids material and construction consistency

Applications


• Suitable for industrial power control modules requiring high dissipation
• Ideal for motor-driver circuits needing sustained continuous current
• Used for prototyping with through-hole assembly processes
• Can be used for thermal stress testing across wide temperatures

What temperature range can this device operate within?


It functions over a -55°C to 150°C operating window.

How many pins and what package does it use?


It is supplied in an 8-pin PG-TDSON package.

Is this component suitable for multi-transistor assemblies?


It is a single-transistor device intended for discrete placement in circuits.

What approvals relate to material or construction standards?


It meets the IEC 61249-2-21 standard.

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